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ÃèÊö:650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode.ÌØÕ÷ÃèÊö:First 650V automotive qualified technology with integrated fast body diode on the marketLimited voltage overshoot during hard commutation ¨C self limiting di/dt and dv/dtLow gate charge value Q gLow Q rr at repetitive commutation on body diode & low Q ossReduced turn on and turn of delay timesCompliant to AEC Q101 standardÓÅÊÆ:Increased safety margin due to higher breakdown voltageReduced EMI appearance and easy to design inBetter light load efficiencyLower switching lossesHigher switching frequency and/or higher duty cycle possibleHigh quality and reliabilityÄ¿±êÓ¦ÓÃ:Unidirectional and bidirectional DC-DC converterBattery chargerHID lighting Buy online
Ö¸±ê²ÎÊýParametricsIPB65R310CFDA Budgetary Price €/1k 1.0 Encryption no ID (@25¡ãC) max 11.4 A ID max 11.4 A IDpuls max 34.4 A Language PSpice Ptot max 104.2 W Package D2PAK (TO-263) Polarity N Product Category Power MOSFET HV CoolMOS™ QG (typ @10V) 41.0 nC QG 41.0 nC RDS (on) (@10V) max 310.0 mΩ RDS (on) max 310.0 mΩ Rth 1.2 K/W RthJA max 62.0 K/W RthJC max 1.2 K/W Simulator OrCAD ; SIMetrix ; TINA Special Features automotive Technology CoolMOS™ CFDA VDS max 650.0 V VGS(th) min max 3.5 V 4.5 V
ÃèÊö:650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode.ÌØÕ÷ÃèÊö:First 650V automotive qualified technology with integrated fast body diode on the marketLimited voltage overshoot during hard commutation ¨C self limiting di/dt and dv/dtLow gate charge value Q gLow Q rr at repetitive commutation on body diode & low Q ossReduced turn on and turn of delay timesCompliant to AEC Q101 standardÓÅÊÆ:Increased safety margin due to higher breakdown voltageReduced EMI appearance and easy to design inBetter light load efficiencyLower switching lossesHigher switching frequency and/or higher duty cycle possibleHigh quality and reliabilityÄ¿±êÓ¦ÓÃ:Unidirectional and bidirectional DC-DC converterBattery chargerHID lighting Buy online IPP65R310CFDAEN02_00 | 2012-05-23 | pdf | 1.7 MB Ö¸±ê²ÎÊýParametricsIPB65R310CFDA Budgetary Price €/1k 1.0 Encryption no ID (@25¡ãC) max 11.4 A ID max 11.4 A IDpuls max 34.4 A Language PSpice Ptot max 104.2 W Package D2PAK (TO-263) Polarity N Product Category Power MOSFET HV CoolMOS™ QG (typ @10V) 41.0 nC QG 41.0 nC RDS (on) (@10V) max 310.0 mΩ RDS (on) max 310.0 mΩ Rth 1.2 K/W RthJA max 62.0 K/W RthJC max 1.2 K/W Simulator OrCAD ; SIMetrix ; TINA Special Features automotive Technology CoolMOS™ CFDA VDS max 650.0 V VGS(th) min max 3.5 V 4.5 V
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